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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 C Junction Temperature...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 225 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ -50 V VCEO Collector to Emitter Voltage..................................................................................... -50 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ...................................................................................................... -150 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -50 -50 -5 120 25 80 Typ. Max. -100 -100 -300 -1.1 700 7 Unit V V V nA nA mV V Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE1 Rank Range A4Y 120-240 A4G 200-400 A4B 350-700 HMBT1015 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 o Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 2/3 Saturation Voltage & Collector Current 1000 125 C 75 C o VCE(sat) @ IC=10IB 25 C o Saturation Voltage (mV) 75 C 100 125 C 25 C o o o hFE 100 hFE @ VCE=6V 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=10IB 10.00 Capacitance & Reverse-Biased Voltage Saturation Voltage (mV) 75 C 1000 25 C o o Capacitance (pF) Cob 125 C o 100 0.1 1 10 100 1000 1.00 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (V) Cutoff Frequency & Collector Current 1000 1 Safe Operating Area PT=1ms Cutoff Frequency (MHz).. . VCE=10 100 Collector Current-IC (mA) PT=1s 0.1 PT=100ms 10 1 1 10 100 1000 0.01 1 10 100 Collector Current (mA) Forward-Biased Voltage-VCE (V) HMBT1015 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 3/3 A L Marking: 3 BS 1 V G 2 A4 Rank Code Control Code 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N C D H K J Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBT1015 HSMC Product Specification |
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